Specification:
Item Type: Recovery Diode Module
Forward Average Current IF (AV): 100A
Junction Temperature TJ: -55~150
Avalanche Energy EAS: 180MJ
Maximum Reverse Peak Current IRM: 10mA
DV/DT: 10V/us
Ls: 3.0nH
Ct: 10.3pF
Features:
1The chip is electrically insulated from the backplate, 2500V AC voltage 2Full crimped structure with excellent temperature characteristics and power cycling capability 3Simple installation, easy to use and maintain 4Made of high quality material, durable and long service life 5High quality and great processing, perfect replacement for the old one
Package List:
1 x Recovery Diode Module
